Open AccessTheoretical Evaluation of the Interface Modification for Aluminium Nitride Growth on Si
Author(s) -
Masri P.,
Cimalla V.,
Pezoldt J.,
Camassel J.,
Gil B.,
Averous M.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390062
Subject(s) - aluminium nitride , aluminium , materials science , nitride , substrate (aquarium) , layer (electronics) , buffer (optical fiber) , germanium , carbonization , optoelectronics , nanotechnology , silicon , composite material , computer science , scanning electron microscope , telecommunications , oceanography , geology
In this work, we propose a strategy for the optimization of the SiC/Si structure as a subsequent substrate to grow aluminium nitride (AlN) layers on Si. Several routes are investigated within the framework of a theoretical approach which we recently developed and which has proved itself to be very useful in many aspects of the physics of heteroepitaxy. In this paper, we investigate one useful task of using Si as substrate with SiC buffer layer which may be grown by carbonization (C) of the Si surface. Germanium (Ge) incorporation is also modelled. The AlN/SiC/Si structure is theoretically optimized by determining the composition out of C and Ge of the buffer layer.