Open AccessPiezoelectric Field Influence on GaN/Al x Ga 1—x N Quantum Well Optical Properties
Author(s) -
Fanget S.,
BruChevallier C.,
Briot O.,
Ruffenach S.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390061
Subject(s) - photoluminescence , quantum confined stark effect , stark effect , electric field , quantum well , condensed matter physics , piezoelectricity , materials science , photoluminescence excitation , luminescence , blueshift , excitation , polarization (electrochemistry) , spectroscopy , optoelectronics , chemistry , physics , optics , laser , composite material , quantum mechanics
The absorption and luminescence properties of hetero‐polarization GaN/Al x Ga 1— x N ( x = 0.12 and 0.165) quantum well (QW) structures are studied by photoreflectivity, photoluminescence excitation spectroscopy (PLE), and photoluminescence at low temperature. The QW transition energy as a function of well thickness exhibits a quantum‐confined Stark effect (QCSE) due to the presence of a strong built‐in electric field (piezoelectricity and spontaneous polarization). An electric field strength of 120 kV/cm in the barrier and between 600 and 800 kV/cm in the well are obtained from the analysis of Franz‐Keldysh oscillations in photoreflectivity spectra. These values are in good agreement with results from the fit of the QW transition energy versus the thickness, using the electric field as a parameter.