Open AccessUV‐LED Using p‐Type GaN/AlN Supperlattice Cladding Layer
Author(s) -
Iwaya M.,
Terao S.,
Takanami S.,
Miyazaki A.,
Kamiyama S.,
Amano H.,
Akasaki I.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390060
Subject(s) - cladding (metalworking) , materials science , ternary operation , layer (electronics) , optoelectronics , alloy , ternary alloy , composite material , computer science , programming language
GaN/AlN supperlattice was used as the p‐type cladding layer of UV‐LED. I – V characteristics indicates that UV‐LED having GaN/AlN supperlattice has much lower series resistance than the conventional UV‐LED in which ternary alloy AlGaN was used as the cladding layer.