Open AccessAmorphous GaN‐Based Electroluminescent Devices Operating in UV Spectral Region
Author(s) -
Honda T.,
Inao Y.,
Konno K.,
Mineo K.,
Kumabe S.,
Kawanishi H.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390048
Subject(s) - electroluminescence , materials science , amorphous solid , optoelectronics , molecular beam epitaxy , deposition (geology) , epitaxy , nanotechnology , layer (electronics) , chemistry , crystallography , paleontology , sediment , biology
Amorphous GaN films were deposited using a compound‐source molecular beam epitaxy technique. Electroluminescent devices were also fabricated using the deposited films. The devices were operated using sine wave voltage at room temperature. One of the emission peaks was located in the UV spectral region. The deposition rate was increased by introducing a small ammonia flow.