Open AccessTight‐Binding Simulation of an InGaN/GaN Quantum Well with indium Concentration Fluctuation
Author(s) -
Gleize J.,
Di Carlo A.,
Lugli P.,
Jancu J.M.,
Scholz R.,
Ambacher O.,
Gerthsen D.,
Hahn E.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390047
Subject(s) - indium , supercell , parametrization (atmospheric modeling) , materials science , tight binding , homogeneous , quantum well , optoelectronics , quantum dot , stokes shift , band gap , condensed matter physics , electronic structure , physics , statistical physics , optics , luminescence , thunderstorm , laser , meteorology , radiative transfer
The electronic properties of InGaN quantum wells with In composition fluctuation were investigated within a tight‐binding model, using a new sp 3 s * d 5 parametrization allowing for a correct treatment of strain effects. An experimental In concentration profile measurement was used to build a simulation supercell consistent with the real In distribution inside the InGaN layer. The calculated fundamental electronic transitions exhibit a Stokes shift from 50 meV to 100 meV between In rich and more homogeneous regions of the well, indicating that the formation of In rich clusters play a fundamental part in the optical properties of InGaN based devices.