Open AccessIn‐Plane Optical Anisotropy in In x Ga 1—x N/GaN Multiple Quantum Wells
Author(s) -
Chen C.H.,
Huang L.Y.,
Chen Y.F.,
Lin T.Y.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390044
Subject(s) - anisotropy , photoluminescence , crystal (programming language) , refractive index , materials science , quantum well , semiconductor , symmetry (geometry) , orientation (vector space) , condensed matter physics , photonic crystal , interference (communication) , nitride , optoelectronics , optics , physics , laser , geometry , mathematics , nanotechnology , telecommunications , channel (broadcasting) , computer science , programming language , layer (electronics)
We have investigated the crystal orientation dependence of optical properties in In x Ga 1— x N/GaN multiple quantum wells. The spectral peak and intensity of the micro‐photoluminescence emission for different crystal orientations were found to have sixfold symmetry. Quite interestingly, the refractive index obtained from the interference pattern, also varies with the crystal orientation. The 60 degree periodic anisotropy of electronic transitions as well as optical parameters were interpreted in terms of the formation of hexagonal truncated pyramidal In‐rich clusters. Our result provides an alternative solution to improve the designs of photonic and electronic devices based on nitride semiconductors.