MOCVD‐Grown InGaN/GaN MQW LEDs on Si(111) | Zendy

Poschenrieder M. | Zendy; Fehse K. | Zendy; Schulz F. | Zendy; Bläsing J. | Zendy; Witte H. | Zendy; Krtschil A. | Zendy; Dadgar A. | Zendy; Diez A. | Zendy; Christen J. | Zendy; Krost  A. | Zendy

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MOCVD‐Grown InGaN/GaN MQW LEDs on Si(111)

Author(s) -

Poschenrieder M.,

Fehse K.,

Schulz F.,

Bläsing J.,

Witte H.,

Krtschil A.,

Dadgar A.,

Diez A.,

Christen J.,

Krost A.

Publication year - 2002

Publication title -

physica status solidi (c)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1610-1634

DOI - 10.1002/pssc.200390040

Subject(s) - light emitting diode , electroluminescence , metalorganic vapour phase epitaxy , optoelectronics , materials science , chemical vapor deposition , photoluminescence , quantum efficiency , diode , quantum well , layer (electronics) , wide bandgap semiconductor , substrate (aquarium) , diffraction , optics , epitaxy , nanotechnology , laser , physics , oceanography , geology

InGaN/GaN multiple‐quantum‐well (MQW) light emitting diodes (LEDs) were deposited by metal–organic chemical vapour deposition on Si(111) substrate. In this paper, we present a study on the X‐ray diffraction (XRD), electroluminescence (EL), photoluminescence (PL), and current‐voltage ( I – V ) characteristics of the LEDs, fabricated at varied quantum well growth temperature T QW . PL intensity as well as XRD quantum well interface quality show moderate effects of structural defects within the MQW region on the internal quantum efficiency. A comparison between PL and EL intensity hints at severe losses of injected carriers within the low‐ T QW LEDs, being responsible for drastically decreased EL efficiencies. These could result from imperfection of the p‐AlGaN blocking layer on top of the MQW region, as deduced from additional information from the I – V characteristics.

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