Open AccessMOCVD‐Grown InGaN/GaN MQW LEDs on Si(111)
Author(s) -
Poschenrieder M.,
Fehse K.,
Schulz F.,
Bläsing J.,
Witte H.,
Krtschil A.,
Dadgar A.,
Diez A.,
Christen J.,
Krost A.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390040
Subject(s) - light emitting diode , electroluminescence , metalorganic vapour phase epitaxy , optoelectronics , materials science , chemical vapor deposition , photoluminescence , quantum efficiency , diode , quantum well , layer (electronics) , wide bandgap semiconductor , substrate (aquarium) , diffraction , optics , epitaxy , nanotechnology , laser , physics , oceanography , geology
InGaN/GaN multiple‐quantum‐well (MQW) light emitting diodes (LEDs) were deposited by metal–organic chemical vapour deposition on Si(111) substrate. In this paper, we present a study on the X‐ray diffraction (XRD), electroluminescence (EL), photoluminescence (PL), and current‐voltage ( I – V ) characteristics of the LEDs, fabricated at varied quantum well growth temperature T QW . PL intensity as well as XRD quantum well interface quality show moderate effects of structural defects within the MQW region on the internal quantum efficiency. A comparison between PL and EL intensity hints at severe losses of injected carriers within the low‐ T QW LEDs, being responsible for drastically decreased EL efficiencies. These could result from imperfection of the p‐AlGaN blocking layer on top of the MQW region, as deduced from additional information from the I – V characteristics.