Open AccessEffect of Barrier Thickness and Barrier Doping on the Properties of InGaN/GaN Multiple‐Quantum‐Well Structure Light Emitting Diode
Author(s) -
Tsai TzongLiang,
Chang ChihSung,
Chen TzerPeng,
Huang KuoHsin
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390039
Subject(s) - light emitting diode , electroluminescence , materials science , optoelectronics , doping , diode , photoluminescence , fabrication , quantum well , optics , nanotechnology , laser , physics , layer (electronics) , medicine , alternative medicine , pathology
Optical and electrical properties of InGaN/GaN multi‐quantum‐well (MQW) structure light‐emitting diodes (LED) are systematically studied as a function of barrier thickness and Si doping of barriers. The emission energy of photoluminescence (PL) and electroluminescence (EL) of MQW‐LEDs decrease with barrier thickness increased, but with Si doping of barriers decreased. The electrical characteristics of MQW‐LEDs strongly depend on barrier thickness and Si‐doped content in barriers. With increasing barrier thickness, forward voltages of MQW‐LEDs dramatically reduce as well as the barriers are increasingly doped with Si. Reverse currents of MQW‐LEDs measured at reverse bias 6 V present a similar behavior that Ir increase with increasing barrier thickness as well as increasing Si doped content in barriers. The experimental results imply an optimized quality of MQW‐LED fabrication by an appropriate combination of barrier thickness and carrier concentration.