Open AccessImprovement of Electrical Properties of MOCVD Grown Al x Ga 1— x N/GaN Heterostructure with Isoelectronic Al‐Doped Channel
Author(s) -
Lee JaeHoon,
Kim JongHyun,
Bae SungBum,
Lee KyuSuk,
Lee JaeSeung,
Kim JongWook,
Hahm SungHo,
Lee JungHee
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390033
Subject(s) - metalorganic vapour phase epitaxy , materials science , heterojunction , doping , chemical vapor deposition , optoelectronics , sapphire , layer (electronics) , acceptor , epitaxy , condensed matter physics , nanotechnology , laser , optics , physics
To improve electrical characteristics of AlGaN/GaN heterostructure for HFET application, high quality AlGaN/GaN was grown by metal organic chemical vapour deposition on sapphire. We applied the isoelectronic Al‐doping into the GaN channel layers of both conventional AlGaN/GaN and modified AlGaN/AlN/GaN heterostuctures. 2DEG mobilities of 1690 and 9280 cm 2 /Vs were measured for 25 nm Al 0.3 Ga 0.7 N/1 nm AIN/70 nm Al‐doped channel/GaN heterostucture at 300 and 77 K, respectively. The improved result can be explained by both a decrease in the compensating acceptor or other defects associated with the formation of screw dislocation through the Al incorporation in the channel layer and a decrease in alloy disorder scattering at heterostructure by introducing binary thin AlN layer between Al 0.3 Ga 0.7 N and Al‐doped channel layer.