Improvement of Electrical Properties of MOCVD Grown Al x Ga 1— x N/GaN Heterostructure with Isoelectronic Al‐Doped Channel

To improve electrical characteristics of AlGaN/GaN heterostructure for HFET application, high quality AlGaN/GaN was grown by metal organic chemical vapour deposition on sapphire. We applied the isoelectronic Al‐doping into the GaN channel layers of both conventional AlGaN/GaN and modified AlGaN/AlN/GaN heterostuctures. 2DEG mobilities of 1690 and 9280 cm 2 /Vs were measured for 25 nm Al 0.3 Ga 0.7 N/1 nm AIN/70 nm Al‐doped channel/GaN heterostucture at 300 and 77 K, respectively. The improved result can be explained by both a decrease in the compensating acceptor or other defects associated with the formation of screw dislocation through the Al incorporation in the channel layer and a decrease in alloy disorder scattering at heterostructure by introducing binary thin AlN layer between Al 0.3 Ga 0.7 N and Al‐doped channel layer.