Open AccessEffect of AlN Buffer Layers on GaN/MnO Structure
Author(s) -
Ito S.,
Fujioka H.,
Ohta J.,
Takahashi H.,
Oshima M.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390020
Subject(s) - buffer (optical fiber) , materials science , photoluminescence , pulsed laser deposition , atomic force microscopy , polarity (international relations) , optoelectronics , morphology (biology) , deposition (geology) , thin film , nanotechnology , chemistry , telecommunications , paleontology , biochemistry , sediment , biology , computer science , cell , genetics
We have investigated the effect of AlN buffer layers on characteristics of GaN films grown on nearly lattice matched MnO (111) substrates by pulsed laser deposition (PLD). We have found that the polarity of the GaN films grown on the MnO substrates changes from the N‐polarity to the Ga‐polarity with the use of AlN buffer layers. Atomic force microscopy (AFM) observations and photoluminescence (PL) measurements have revealed that the surface morphology and the optical properties of the GaN films on MnO can be improved by the AlN buffer layers.