Open AccessPreparation of Epitaxial Templates for Molecular Beam Epitaxy of III‐Nitrides on Silicon Substrates
Author(s) -
Lebedev V.,
Pezoldt J.,
Cimalla V.,
Jinschek J.,
Morales F.M.,
Ambacher O.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390018
Subject(s) - materials science , epitaxy , molecular beam epitaxy , substrate (aquarium) , carbonization , template , nitride , silicon , optoelectronics , chemical vapor deposition , chemical engineering , nanotechnology , layer (electronics) , composite material , scanning electron microscope , oceanography , geology , engineering
In this paper, three different methods of composite substrate preparation for epitaxial growth of III‐nitride epilayers are described. Firstly, molecular beam epitaxy (MBE) of thin 2H‐AlN layers grown on off‐axis Si(001) has been investigated. 2H‐AlN was deposited at relatively low temperatures (730–830 °C) allowing a full coverage of the substrate to be quickly achieved. The growth of thin 3C‐SiC layers on Si surface has been performed by chemical vapor deposition and MBE carbonization. The following types of SiC/Si composite substrates have been studied: (i) SiC/Si templates grown by rapid thermal carbonization of the Si surface, (ii) SiC/Si templates formed by MBE carbonization of the Si surface.