Open AccessCapacitance–Voltage Characterization of AlN MIS Structures Grown on 6H‐SiC(0001) Substrates by MOCVD
Author(s) -
Hageman W.,
Rys A.,
Schmitt J.,
Edgar J.H.,
Liu B.,
Koleske D.D.
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390006
Subject(s) - materials science , metalorganic vapour phase epitaxy , capacitance , breakdown voltage , characterization (materials science) , nucleation , optoelectronics , depletion region , silicon , silicon carbide , semiconductor , voltage , analytical chemistry (journal) , layer (electronics) , nanotechnology , composite material , epitaxy , chemistry , electrical engineering , electrode , engineering , organic chemistry , chromatography
The electrical characterization of Al/AlN/SiC metal–insulator–semiconductor structures was carried out by the capacitance–voltage technique at room temperature. The AlN layers were grown by MOCVD on a silicon polarity 3.5° off‐axis 6H‐SiC(0001) substrates at temperatures ranging from 950 to 1500 °C. The high frequency C – V characteristics clearly showed accumulation at 25 V and a deep‐depletion behavior at voltages from 0 to —30 V. UV light was used to enhance the generation of minority carriers in the SiC depletion layer but this did not change appreciably the C – V curves. The AlN thickness was estimated from high frequency C – V measurements under accumulation condition. Breakdown voltages and field strengths were measured for all samples. The lowest density of defects in the AlN nucleation layers resulting in the highest breakdown field were deposited at 1100 °C, in agreement with structural characterization.