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Scattering of Excitons by Free Carriers in Semiconducting Quantum Well Structures: Finite Potential Well Model
Author(s) -
Koh Tong San,
Feng Yuan Ping,
Spector Harold N.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980219
Subject(s) - exciton , scattering , quantum well , ionization , physics , condensed matter physics , impact ionization , elastic scattering , quantum , quantum mechanics , ion , laser
We present a theoretical calculation of the elastic and ionization scattering cross sections of excitons due to their scattering by free carriers, in semiconducting quantum well structures of finite width, using the finite confining potential well model. Our results reveal interesting features that differ significantly from the predictions of the infinite confining potential well model. We find that both the elastic and ionization cross sections initially decrease with decreasing well width, but then in‐ crease below a critical well width where the exciton begins to revert to a quasi‐3D behavior. We compare the present results with those obtained using previous models to account for these new effects.