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Morphology and Luminescence of p‐Doped Porous Silicon
Author(s) -
zur Mühlen E.,
Chang Da,
Rogaschewski S.,
Niehus H.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980213
Subject(s) - materials science , porous silicon , luminescence , silicon , wafer , scanning electron microscope , etching (microfabrication) , morphology (biology) , mesoporous material , doping , anodizing , layer (electronics) , chemical engineering , boron , nanotechnology , optoelectronics , composite material , chemistry , catalysis , aluminium , biochemistry , organic chemistry , biology , engineering , genetics
Porous silicon (PS) layers were created with different etching conditions on boron doped silicon wafers. Morphologies of the PS layers and their surfaces were investigated with atomic force and scanning electron microscopy. Low current densities during anodization led to homogeneous layers, while high current densities resulted in strain induced mechanical instabilities. The strain leads to a peeling off of the layer for mitre or mesoporous silicon. In contrast, in macroporous films strain can be relieved laterally leading to the local formation of channels. Luminescence properties of the samples are investigated and related to the PS morphology.