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On the Theory of Huang X‐Ray Scattering Caused by Point Defects in Hexagonal Crystals
Author(s) -
Michelitsch Th.,
Wunderlin A.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980206
Subject(s) - scattering , hexagonal crystal system , crystallographic defect , point group , point (geometry) , crystallography , x ray , intensity (physics) , physics , condensed matter physics , materials science , molecular physics , optics , chemistry , mathematics , geometry
The theory of Huang scattering of point defects in hexagonal crystals is treated. The concept of “elementary defects” which is based on group theoretical methods is introduced. From this point of view, point defects in hexagonal crystals can be understood as unique superpositions of three types of incoherent elementary scattering defects. These elementary defects reflect characteristical defect symmetries. This concept yields a simple analytical expression for the Huang intensity in the case of arbitrary scattering vectors. The derived intensity function may be a useful tool for the investiga‐ tion of defect structures in h.c.p. metals by Huang scattering measurements.