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The Effect of Pressure on the Concentration of Thermal Donors in Czochralski Grown Silicon
Author(s) -
Misiuk A.,
Jung W.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980176
Subject(s) - silicon , annealing (glass) , hydrostatic pressure , argon , oxygen , materials science , czochralski method , thermal , precipitation , argon gas , analytical chemistry (journal) , chemistry , metallurgy , thermodynamics , chromatography , meteorology , physics , organic chemistry
We have investigated the effect of annealing at temperatures up to 1230 K under hydrostatic argon pressure up to 1.1 GPa on thermal donor formation and on interstitial oxygen precipitation in Czechralski grown silicon. Depending on annealing temperature and applied pressure, the stressen‐hanced formation of thermal donors, enhanced interstitial oxygen loss from the Si‐O solid solution, and generation of oxygen‐related defects were observed.