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ZnSb and GaSb Bulk Amorphous Semiconductors: Transport Properties
Author(s) -
Antonov V. E.,
Barkalov O. I.,
Kolyubakin A. I.,
Ponyatovsky E. G.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980165
Subject(s) - materials science , amorphous solid , seebeck coefficient , stoichiometry , amorphous semiconductors , electrical resistivity and conductivity , semiconductor , condensed matter physics , conductivity , analytical chemistry (journal) , crystallography , chemistry , thermal conductivity , optoelectronics , composite material , physics , chromatography , quantum mechanics
Temperature dependencies of the conductivity and thermopower of bulk amorphous semiconducting alloys Zn 41 Sb 59 and Ga 100−x Sb x with 47.5 < x < 55 were measured at 80 to 370 K and 120 to 370 K, respectively. The samples were prepared by solid state amorphization of the quenched high pressure phases occurring on heating at ambient pressure. The electrical properties of nonstoichiometric a‐Zn 41 Sb 59 are well described by the conventional Mott‐Davis model. Those of both stoichiometric a‐GaSb and nonstoichiometric a‐Ga 100−x Sb x , appear to be more unusual and require a modification of the model.