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Bulk Amorphous GaSb Semiconductors Prepared by Thermobaric Treatment: Formation and Properties
Author(s) -
Barkalov O. I.,
Kolesnikov A. I.,
Antonov V. E.,
Ponyatovsky E. G.,
Dahlborg U.,
Dahlborg M.,
Han A.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980164
Subject(s) - crystallization , differential scanning calorimetry , materials science , amorphous solid , exothermic reaction , tin , analytical chemistry (journal) , phase (matter) , crystallography , chemical engineering , metallurgy , thermodynamics , chemistry , organic chemistry , physics , chromatography , engineering
The multistage process of solid state amorphization and subsequent crystallization of the quenched “white tin” high pressure phase of Ga‐Sb alloys containing 20 to 80 at% Sb was studied at ambient pressure by differential scanning calorimetry. The heats of both amorphization and crystallization were exothermic and equal to (3.5 ± 0.5) and (8.3 ± 1.0) kJ/mol, respectively. Formation of the bulk amorphous alloys free of any crystalline inclusions was observed for compositions with 47.5 to 52.5 at% Sb. The structure of the amorphous GaSb produced by solid state amorphization was studied by neutron diffraction. It is found to be nearly identical to that of a sample prepared earlier by sputtering.