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Nonequilibrium Phase Transformations in Diamond and Zincblende Semiconductors under High Pressure
Author(s) -
Lyapin A. G.,
Brazhkin V. V.,
Popova S. V.,
Sapelkin A. V.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980163
Subject(s) - non equilibrium thermodynamics , materials science , tetrahedron , diamond , amorphous solid , semiconductor , amorphous semiconductors , silicon , phase (matter) , condensed matter physics , polyamorphism , diamond cubic , softening , lattice (music) , high pressure , bulk modulus , diamond anvil cell , quenching (fluorescence) , thermodynamics , crystallography , chemistry , physics , optics , metallurgy , composite material , optoelectronics , organic chemistry , fluorescence , acoustics
The problem of nonequilibrium phase transformations is reviewed for compression of diamond, zincblende, and amorphous tetrahedral semiconductors and for decompression of their high‐pressure phases. The importance of lattice or network dynamical properties for the nature of nonequilibrium transformations is shown. Using low‐temperature quenching of high‐pressure phases, we obtained new Crystalline phases for Ge and Ge‐Gash solid solutions, which have X‐ray patterns very similar to corresponding data for rhombohedral R8 silicon. We established that a number of anomalous features, like elastic softness, pressure‐induced geometrical distortion, and strong bulk modulus softening (δ B /δ P > 0), distinguish the pressure behavior of the amorphous tetrahedral network in a‐GaSb from its crystalline counterpart.