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New Structural Systematics in the II–VI, III–V, and Group‐IV Semiconductors at High Pressure
Author(s) -
McMahon M. I.,
Nelmes R. J.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980151
Subject(s) - systematics , semiconductor , diffraction , group (periodic table) , semiconductor materials , crystallography , materials science , condensed matter physics , chemistry , physics , optics , optoelectronics , biology , zoology , taxonomy (biology) , organic chemistry
A systematic study of the II‐VI, II‐V, and group‐IV semiconductors using angle‐dispersive diffraction techniques is revealing new structures and transitions that significantly modify the accepted structural systematics of these materials. Recent new results from Ge, ZnSe, InSb, and GaAs extend the range of some aspects already indicated by our previous work, and new intermediate phases have been found in InSb, and in HgSe and HgTe.