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Identification of the L‐Band in In x Ga 1−x P/In) 0.5 Al 0.5 P Multiple Quantum Wells from High Pressure Measurement
Author(s) -
Patel D.,
Interholzinger K.,
Thiagarajan P.,
Robinson G. Y.,
Mei C. S.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980144
Subject(s) - conduction band , photoluminescence , band gap , lattice (music) , high pressure , materials science , condensed matter physics , electronic band structure , physics , optoelectronics , electron , nuclear physics , thermodynamics , acoustics
High pressure photoluminescence measurements used to study the band structure of the In x Ga 1−x P/In 0.5 Al 0.5 P (x ⩽ 0.48) multiple quantum wells revealed that in narrow‐lattice‐matched and highly tensile strain structures the L 1c band is the lowest conduction band state. The L 1c minimum was identified as it shifted with pressure at a rate of (60 ± 5) meV/GPa, considerably smaller than that of the direct gap Γ 1c states.