Identification of the L‐Band in In x Ga 1−x P/In) 0.5 Al 0.5 P Multiple Quantum Wells from High Pressure Measurement | Zendy

Patel D. | Zendy; Interholzinger K. | Zendy; Thiagarajan P. | Zendy; Robinson G. Y. | Zendy; Mei C. S. | Zendy

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Identification of the L‐Band in In x Ga 1−x P/In) 0.5 Al 0.5 P Multiple Quantum Wells from High Pressure Measurement

Author(s) -

Patel D.,

Interholzinger K.,

Thiagarajan P.,

Robinson G. Y.,

Mei C. S.

Publication year - 1996

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221980144

Subject(s) - conduction band , photoluminescence , band gap , lattice (music) , high pressure , materials science , condensed matter physics , electronic band structure , physics , optoelectronics , electron , nuclear physics , thermodynamics , acoustics

High pressure photoluminescence measurements used to study the band structure of the In x Ga 1−x P/In 0.5 Al 0.5 P (x ⩽ 0.48) multiple quantum wells revealed that in narrow‐lattice‐matched and highly tensile strain structures the L 1c band is the lowest conduction band state. The L 1c minimum was identified as it shifted with pressure at a rate of (60 ± 5) meV/GPa, considerably smaller than that of the direct gap Γ 1c states.

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