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Photoluminescence of a Pseudomorphic Si 1−y C y /Si MQW Structure under Pressure
Author(s) -
Liu Z. X.,
Goñi A. R.,
Brunner K.,
Eberl K.,
Syassen K.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980141
Subject(s) - photoluminescence , hydrostatic pressure , exciton , phonon , materials science , excitation , spectral line , silicon , band gap , condensed matter physics , atomic physics , optoelectronics , physics , quantum mechanics , astronomy , thermodynamics
We have measured photoluminescence (PL) spectra of a pseudomorphic Si 1−y C y /Si ( y = 0.0045) multiple quantum well (MQW) structure under hydrostatic pressure (0 to 8 GPa) and at low temperatures (10 to 70 K). The MQW‐related emission at energies below the Si band gap consists of bound and free exciton zere‐phonon lines and related Si‐Si TO phonon replicas. All MQW‐related PL peaks shift to lower energy with increasing pressure. The dependence of PL‐peak intensities and energies on excitation power density, temperature, and pressure are consistent with a type‐I band alignment throughout the pressure range investigated. Furthermore, the total band offset and the activation energies involved in the decay of the free and bound exciton emission show only a very small change with pressure.