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An Investigation of the Formation Mechanisms of Electric Field Domains in GaAs/AlAs Superlattices
Author(s) -
Sun Baoquan,
Jiang Desheng,
Liu Zhenxing,
Zhang Yaohui,
Liu Wei
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980140
Subject(s) - superlattice , electric field , hydrostatic pressure , quantum tunnelling , condensed matter physics , materials science , field (mathematics) , electrical resistivity and conductivity , physics , thermodynamics , quantum mechanics , mathematics , pure mathematics
We have studied the vertical transport and formation mechanisms of electric field domains in doped weakly‐coupled GaAs/AlAs superlattices. Under hydrostatic pressure two kinds of sequential resonant tunneling are observed within the pressure range from 0 to 4.5 kbar. A transition from Γ‐Γ to Γ‐X sequential resonant tunneling occurs at P t ≈ 1.6 kbar. For P < P t, the high electric field domain is formed by the Γ‐Γ process, while for P > P t it is preferentially formed by the Γ‐X process.