An Investigation of the Formation Mechanisms of Electric Field Domains in GaAs/AlAs Superlattices | Zendy

Sun Baoquan | Zendy; Jiang Desheng | Zendy; Liu Zhenxing | Zendy; Zhang Yaohui | Zendy; Liu Wei | Zendy

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An Investigation of the Formation Mechanisms of Electric Field Domains in GaAs/AlAs Superlattices

Author(s) -

Sun Baoquan,

Jiang Desheng,

Liu Zhenxing,

Zhang Yaohui,

Liu Wei

Publication year - 1996

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221980140

Subject(s) - superlattice , electric field , hydrostatic pressure , quantum tunnelling , condensed matter physics , materials science , field (mathematics) , electrical resistivity and conductivity , physics , thermodynamics , quantum mechanics , mathematics , pure mathematics

We have studied the vertical transport and formation mechanisms of electric field domains in doped weakly‐coupled GaAs/AlAs superlattices. Under hydrostatic pressure two kinds of sequential resonant tunneling are observed within the pressure range from 0 to 4.5 kbar. A transition from Γ‐Γ to Γ‐X sequential resonant tunneling occurs at P t ≈ 1.6 kbar. For P < P t, the high electric field domain is formed by the Γ‐Γ process, while for P > P t it is preferentially formed by the Γ‐X process.

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