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Investigation of Dopant Segregation in GaAsAlAs Short‐Period Superlattices by Hall Effect under High Pressure
Author(s) -
Robert J. L.,
Bosc F.,
Sicart J.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980139
Subject(s) - superlattice , dopant , molecular beam epitaxy , materials science , hydrostatic pressure , hall effect , doping , condensed matter physics , period (music) , relaxation (psychology) , semiconductor , lattice (music) , epitaxy , optoelectronics , electrical resistivity and conductivity , nanotechnology , physics , psychology , social psychology , layer (electronics) , quantum mechanics , acoustics , thermodynamics
Hydrostatic pressure is a powerful tool in the electrical characterization of large lattice relaxation states (e.g. DX states in III‐V semiconductors). We have applied this method on short‐period superlattices to evidence the dopant segregation resulting from planar Si doping performed during molecular beam epitaxy. The characterization is based on the dependence of the electrical activation energy both on the dopant location in the microstructure and the applied pressure.