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Galvanomagnetic Measurements of the 2D Electron‐Hole Gas in GaSb/InAs/GaSb Quantum Wells under Pressure up to 2.5 GPa
Author(s) -
Dizhur E. M.,
Itskevich E. S.,
Kashirskaya L. M.,
Voronovsky A. N.,
Malik T. A.,
Stradling R. A.,
Yuen W. T.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980137
Subject(s) - hydrostatic pressure , quantum well , condensed matter physics , magnetoresistance , electron , fermi gas , electron mobility , chemistry , materials science , magnetic field , physics , optics , thermodynamics , quantum mechanics , laser
Galvanomagnetic measurements at 4.2 K in fields up to 7 T under hydrostatic pressures up to 2.5 GPa are presented for a series of GaSb/InAs/GaSb quantum wells with different cap‐to‐well ratios and interface type. The pressure derivatives of electron and hole concentrations have been obtained from Shubnikov‐de Haas (ShdH) oscillations and from fitting the low field data to the classical two‐carrier model. Above the pressureinduced metal‐insulator transition, a strong negative magnetoresistance occurs which is attributed to localisation associated with the presence of GaSb surface donors.