Pressure Dependence of Band Gaps and Deep Centers in Chalcopyrite Semiconductors | Zendy

Choi InHwan | Zendy; Yu P. Y. | Zendy

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Pressure Dependence of Band Gaps and Deep Centers in Chalcopyrite Semiconductors

Author(s) -

Choi InHwan,

Yu P. Y.

Publication year - 1996

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221980133

Subject(s) - chalcopyrite , semiconductor , photoluminescence , band gap , spectral line , materials science , center (category theory) , pressure coefficient , atomic physics , condensed matter physics , chemistry , optoelectronics , physics , copper , crystallography , metallurgy , thermodynamics , astronomy

We have determined the pressure coefficients of fundamental energy gap and deep centers in two chalcopyrite semiconductors AgGaS 2 and CuGaS 2 from their absorption and photoluminescence spectra. The pressure coefficient of a deep center in AgGaS 2 is found to be larger than that of the band gap. A deep center with similar behavior has been reported already in AgGaSe 2 . We discuss the effect of p‐d hybridization on these coefficients.

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