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Pressure Dependence of Band Gaps and Deep Centers in Chalcopyrite Semiconductors
Author(s) -
Choi InHwan,
Yu P. Y.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980133
Subject(s) - chalcopyrite , semiconductor , photoluminescence , band gap , spectral line , materials science , center (category theory) , pressure coefficient , atomic physics , condensed matter physics , chemistry , optoelectronics , physics , copper , crystallography , metallurgy , thermodynamics , astronomy
We have determined the pressure coefficients of fundamental energy gap and deep centers in two chalcopyrite semiconductors AgGaS 2 and CuGaS 2 from their absorption and photoluminescence spectra. The pressure coefficient of a deep center in AgGaS 2 is found to be larger than that of the band gap. A deep center with similar behavior has been reported already in AgGaSe 2 . We discuss the effect of p‐d hybridization on these coefficients.