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Photoluminescence Study of Rare‐Earth Doped Semiconductors under Pressure
Author(s) -
Takarabe K.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980129
Subject(s) - photoluminescence , luminescence , materials science , doping , excited state , atmospheric pressure , emission spectrum , semiconductor , analytical chemistry (journal) , atomic physics , optoelectronics , chemistry , spectral line , physics , chromatography , astronomy , meteorology
Abstract High pressure photoluminescence (PL) studies are reported for InP:Yb and GaAs:Er, O. In InP:Yb, the thermally quenched intra‐4f luminescence is recovered by applying pressure near room temperature. Simultaneously the band‐edge related emission decreases. This result is interpreted qualitatively by a thermal equilibrium between the photocreated electron‐hole pair of the host InP and the excited state of the 4f shell. In MOCVD grown GaAs:Er, O, the sharp luminescence from the intra‐4f transition of Er is observed at 1.538 μm at atmospheric pressure. This is the main emission associated with the Er Ga ‐2O center which has C 2v symmetry. For increasing pressure the PL intensity of the Er intra‐4f emission increases and also some new PL lines appear at low temperatures. These pressure‐induced new lines are assigned to other Er centers with different atomic configurations.