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DLTS Investigations of the Distorted Configuration of the EL2 Defect Stabilized under High Hydrostatic Pressure in GaAs 1−x P x
Author(s) -
Przybytek J.,
Baj M.,
Slupiński T.,
Li MingFu
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980126
Subject(s) - hydrostatic pressure , redistribution (election) , chemistry , amplitude , hydrostatic equilibrium , materials science , analytical chemistry (journal) , electron , atomic physics , thermodynamics , optics , physics , law , chromatography , quantum mechanics , politics , political science
DLTS measurements of GaAs 1−x P x , samples with phosphorus content χ ≈ 0.1 to 0.35 have been performed under hydrostatic pressure. When pressure was applied to samples with χ ≈ 0.1 and 0.2, we observed the emergence of the DLTS peak at ≈90 K. For χ ≈ 0.2 the amplitude of this peak increased by three orders of magnitude. We can unambiguously attribute this phenomenon to a spontaneous rearrangement of the EL2 defect to its distorted configuration, enabled by the free electron capture and not by illumination. For samples with χ ≈ 0.35 the same peak has been observed without pressure, i.e. in this case the distorted configuration of the defect is stable even at ambient pressure. For samples with χ ≈ 0.1 and 0.2, under pressure and below T ≈ 80 K, illumination and/or applying a long, positive, filling pulse, caused a long‐time kinetics of the DLTS signal. This process is explained as a slow redistribution of the EL2 defect between both distorted and nondistorted configurations.