DLTS Investigations of the Distorted Configuration of the EL2 Defect Stabilized under High Hydrostatic Pressure in GaAs 1−x P x

DLTS measurements of GaAs 1−x P x , samples with phosphorus content χ ≈ 0.1 to 0.35 have been performed under hydrostatic pressure. When pressure was applied to samples with χ ≈ 0.1 and 0.2, we observed the emergence of the DLTS peak at ≈90 K. For χ ≈ 0.2 the amplitude of this peak increased by three orders of magnitude. We can unambiguously attribute this phenomenon to a spontaneous rearrangement of the EL2 defect to its distorted configuration, enabled by the free electron capture and not by illumination. For samples with χ ≈ 0.35 the same peak has been observed without pressure, i.e. in this case the distorted configuration of the defect is stable even at ambient pressure. For samples with χ ≈ 0.1 and 0.2, under pressure and below T ≈ 80 K, illumination and/or applying a long, positive, filling pulse, caused a long‐time kinetics of the DLTS signal. This process is explained as a slow redistribution of the EL2 defect between both distorted and nondistorted configurations.