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Coexistence of DX and A 1 States in Highly Doped GaAs:Ge, Te and GaAs:Si, Te
Author(s) -
Wasik D.,
Baj M.,
Przybytek J.,
Słupiński T.,
Kudyk K.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980124
Subject(s) - hydrostatic pressure , metastability , hall effect , impurity , germanium , condensed matter physics , doping , materials science , electrical resistivity and conductivity , silicon , electron mobility , chemistry , physics , optoelectronics , thermodynamics , organic chemistry , quantum mechanics
We studied highly localized states of germanium and silicon impurities in GaAs. Hall effect and resistivity measurements as a function of hydrostatic pressure up to 1.5 GPa and temperature ranging from 4.2 up to 300 K were performed on highly doped LEC GaAs:Ge, Te and LEC GaAs:Si, Te. For Ge impurities our data confirm the two‐electron character of GeDX states and evidence that the GeA 1 state does not reveal any metastable features down to liquid helium temperature. In the case of Si impurities we analyzed Hall concentration and Hall mobility dependencies on pressure and illumination in order to investigate the coexistence of DX and A 1 states.