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Metal‐Insulator Transition in Degenerately Doped Si and Ge under High Uniaxial Pressure
Author(s) -
Baidakov V. V.,
Ermakov V. N.,
Gorin A. E.,
Kolomoets V. V.,
Stuchinska N. V.,
Shenderovskii V. A.,
Tunstall D. P.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980121
Subject(s) - materials science , doping , metal–insulator transition , conductivity , condensed matter physics , effective mass (spring–mass system) , transition metal , scaling , metal , germanium , electrical resistivity and conductivity , thermal conduction , conduction band , silicon , electron , optoelectronics , chemistry , composite material , metallurgy , electrical engineering , biochemistry , physics , geometry , mathematics , quantum mechanics , catalysis , engineering
Strain‐induced metal‐insulator (MI) transitions have been observed in degenerately doped Si:Sb and Ge:Sb crystals at T = 4.2 K and for extremely high uniaxial pressures up to 5 GPa. It is shown that in both Si and Ge the transition from a metallic‐type to an activated conductivity is determined by strain‐induced changes of the conduction band parameters. The data obtained demonstrate that the effective mass donor approach and the scaling theory of localization describe well the MI transition phenomenona observed.