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Effects of Conduction Band Structure and Dimensionality of the Electron Gas on Transport Properties of InSe under Pressure
Author(s) -
Errandonea D.,
Segura A.,
Royo J. F. Sánchez,
Muñoz V.,
Ulrich C.,
Grima P.,
Chevy A.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980118
Subject(s) - electron , condensed matter physics , thermal conduction , conduction band , impurity , electrical resistivity and conductivity , hall effect , electron mobility , band gap , fermi level , excited state , materials science , chemistry , atomic physics , physics , organic chemistry , quantum mechanics , composite material
We report Hall effect and resistivity measurements in InSe under pressure. The electron concentration strongly decreases under pressure in samples exhibiting 3D transport behaviour. This is explained by the existence of an excited minimum in the conduction band moving to lower energies under pressure. The related impurity level traps electrons as it reaches the band gap and approaches the Fermi level. In samples exhibiting 2D behaviour the electron concentration remains constant. This behaviour, together with the pressure dependence of the Hall mobility, is consistent with a previous model which considers high mobility 3D electrons and low mobility 2D electrons to contribute to charge transport along the layers.