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Pressure Dependence of the Electronic Band Gap in 6HSic
Author(s) -
Engelbrecht F.,
Zeman J.,
Wellenhofer G.,
Peppermüller C.,
Helbig R.,
Martinez G.,
Rössler U.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980111
Subject(s) - materials science , condensed matter physics , band gap , engineering physics , optoelectronics , physics
Photoluminescence experiments on 6H‐SiC doped with nitrogen have been performed at low temperature ( T = (29 ± 2) K) under hydrostatic pressure up to 5 GPa. The pressure coefficients of the S 0 , R 0 , P 0 , S 02 , and R 02 emission lines related to the neutral nitrogen donor bound excitons were determined. The pressure coefficient of the indirect gap of 6H‐Sic deduced from the P 0 line turns out to be +2.0 meV/GPa. Nonrelativistic band structure calculations within the density‐functional theory based on the local density approximation are used to calculate the pressure coefficients of the indirect band gaps of the 6H, 4H, and 3C SiC polytypes. The comparison with available experimental data shows good agreement with the theoretical results.