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Pressure Dependence of the Electron Effective Mass in GaAs up to the 1s(Γ)‐1s(X) Crossover
Author(s) -
Jiang Z. X.,
Chen R. J.,
Tischler J. G.,
Weinstein B. A.,
McCombe B. D.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221980106
Subject(s) - effective mass (spring–mass system) , hydrostatic pressure , chemistry , cyclotron resonance , electron , diamond anvil cell , analytical chemistry (journal) , conduction band , diamond , doping , atomic physics , condensed matter physics , high pressure , cyclotron , physics , organic chemistry , engineering physics , chromatography , quantum mechanics , thermodynamics
The effect of hydrostatic pressure ( P ) on the k = 0 conduction band mass m 0 * ( P ) in lightly Si‐doped GaAs is studied by far‐infrared magnetospectroscopy. The electron cyclotron resonance (CR) at ( T = 17 K), and the 1s‐2p + absorption of Si donors (at T = 4.2 K), are measured up to 40 kbar under fields of 6 to 9 T by Fourier transform and laser magnetotransmission techniques. DX‐center trapping is avoided by visible illumination. A double‐bellows diamond‐anvil cell and 36 mm bore magnet enable in situ P‐B‐T tuning. The slopes d E /d B for the CR and 1s‐2p + peaks decrease with pressure in accordance with effective mass theory, with no sign of strong deepening for the Si 1s(Γ) state. We find m 0 * ( P )/m 0 * (0) = 1 + (6.1 ± 0.3) × 10 −3 P – (1.3 ± 0.5) × 10 −5 P 2 ( P in kbar) from the CR data, after correcting for nonparabolicity via an effective two‐band k.p model. This agrees well with prior results limited to 17 kbar, and extends the measurement of m 0 * ( P ) in GaAs to the Γ‐X crossover.