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Acousto‐helicon interaction in narrow‐gap semiconductors
Author(s) -
Ghosh K. K.,
Paul S. N.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221970218
Subject(s) - helicon , semiconductor , narrow gap semiconductor , band gap , condensed matter physics , materials science , electron , coupling (piping) , piezoelectricity , physics , plasma , optoelectronics , quantum mechanics , metallurgy , composite material
A theoretical investigation is made on the propagation of acousto‐helicon waves through plasmas in narrow‐gap semiconducting piezoelectric crystals. Interaction coupling of the acousto‐helicon mode sets up at lower frequencies in the small‐gap semiconductors as compared to that in wide‐gap ones. This is because of the strong dependence of the electron effective mass on the nonparabolicity of the conduction band of the semiconductors. Results are also shown for wide‐gap semiconductors for the sake of comparison.