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Intense laser field effect on confined hydrogenic impurities in quantum semiconductors
Author(s) -
Fanyao Q.,
Fonseca A. L. A.,
Nunes O. A. C.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221970210
Subject(s) - impurity , semiconductor , field (mathematics) , laser , quantum well , atomic physics , electron , physics , amplitude , quantum , condensed matter physics , quantum mechanics , mathematics , pure mathematics
The influence of an intense high‐frequency laser field on the binding energy of a shallow neutral donor impurity in a quantum semiconductor structure such as GaAs/AlGaAs is reported. By making use of a nonperturbative theory and the variational approach it was found that for an on‐centre hydrogenic impurity in the given quantum well, the binding energy for different well widths increases, reaches a maximum, and then decreases quite rapidly with increasing laser field amplitude of the quiver motion of the electron.