Intense laser field effect on confined hydrogenic impurities in quantum semiconductors | Zendy

Fanyao Q. | Zendy; Fonseca A. L. A. | Zendy; Nunes O. A. C. | Zendy

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Intense laser field effect on confined hydrogenic impurities in quantum semiconductors

Author(s) -

Fanyao Q.,

Fonseca A. L. A.,

Nunes O. A. C.

Publication year - 1996

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221970210

Subject(s) - impurity , semiconductor , field (mathematics) , laser , quantum well , atomic physics , electron , physics , amplitude , quantum , condensed matter physics , quantum mechanics , mathematics , pure mathematics

The influence of an intense high‐frequency laser field on the binding energy of a shallow neutral donor impurity in a quantum semiconductor structure such as GaAs/AlGaAs is reported. By making use of a nonperturbative theory and the variational approach it was found that for an on‐centre hydrogenic impurity in the given quantum well, the binding energy for different well widths increases, reaches a maximum, and then decreases quite rapidly with increasing laser field amplitude of the quiver motion of the electron.

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