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Quantized photoemission from rectangular quantum wires of narrow‐gap semiconductors
Author(s) -
Das N. R.,
Ghosh K. K.,
Ghoshal D.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221970115
Subject(s) - semiconductor , degenerate energy levels , angle resolved photoemission spectroscopy , inverse photoemission spectroscopy , curse of dimensionality , condensed matter physics , band gap , photon energy , work function , physics , function (biology) , work (physics) , photon , atomic physics , electronic structure , quantum mechanics , mathematics , statistics , electrode , evolutionary biology , biology
In the present work a theoretical study has been made on the photoemission from rectangular quasi‐one‐dimensional structures of narrow‐gap semiconductors. The effect of reduced dimensionality on the photoemission is seen to be quite prominent. The computations are performed for a temperature of 4.2 K taking strongly degenerate n‐InSb as an example. It is observed from the study that the photoemission exhibits a stair‐case function of incident photon energy and an oscillatory function of the transverse dimensions.