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Two‐LO‐phonon resonant Raman scattering in ii‐vi semiconductors
Author(s) -
Garcícristóbal A.,
Cantarero A.,
Tralleroginer C.,
Limmer W.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221960220
Subject(s) - raman scattering , raman spectroscopy , scattering , phonon , semiconductor , exciton , x ray raman scattering , chemistry , cadmium telluride photovoltaics , atomic physics , condensed matter physics , physics , molecular physics , optics , optoelectronics
Recently, absolute values of second‐order Raman scattering efficiency have been measured around the E 0 and E 0 + Δ 0 critical points of several II‐VI semiconductor compounds. The measurements were performed in the z(x, x)z̄ backscattering configuration on (001) (ZnSe and ZnTe) and (110) (CdTe) surfaces. They show strong incoming and outgoing resonances around the band gap and larger scattering efficiencies as compared to III‐V compounds. A theoretical model which includes excitons as intermediate states in the Raman process is shown to give a very good quantitative agreement between theory and experiment. Only a small discrepancy exists, while in III‐V compounds the discrepancies were close to one order of magnitude. A discussion of the differences in the scattering efficiencies between II‐VI and III‐V compounds is also reported.