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Persistent photoconductivity and properties of the Two‐Dimensional electron Gas in modulation‐doped GaInAs/AlInAs heterostructures after illumination
Author(s) -
Saffian B.,
Kraak W.,
Oelze B.,
Künzel H.,
Böttcher J.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221960207
Subject(s) - heterojunction , fermi gas , photoexcitation , shubnikov–de haas effect , condensed matter physics , photoconductivity , quantum well , materials science , electron , doping , electron mobility , layer (electronics) , optoelectronics , quantum hall effect , hall effect , electron density , chemistry , electrical resistivity and conductivity , quantum oscillations , physics , atomic physics , optics , nanotechnology , quantum mechanics , laser , excited state
The properties of the two‐dimensional electron gas (2DEG) in MBE‐grown low carrier density Ga 0.47 In 0.53 As/Al 0.48 In 0.52 As heterostructures after illumination at low temperatures have been investigated. A strong persistent photoconductivity anddrastic changes of low temperature electronic properties were observed. Thepronounced changes of the quantum oscillations of the magnetoresistivity (Shubnikov‐de Haas effect) and of the quantum Hall effect clearly reveal an important increase of both electron concentration and carrier mobility in the two‐dimensional interface layer. The variations of the electronic properties are attributed to photoexcitation of electron‐hole pairs in the GaInAs layer.