Spectroscopic characteristics of color centers produced in a LiF crystal surface layer by microwave discharge | Zendy

Termikirtychev V. V. | Zendy; Tsuboi T. | Zendy; Konyzhev M. E. | Zendy; Danilov V. P. | Zendy

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Spectroscopic characteristics of color centers produced in a LiF crystal surface layer by microwave discharge

Author(s) -

Termikirtychev V. V.,

Tsuboi T.,

Konyzhev M. E.,

Danilov V. P.

Publication year - 1996

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.2221960127

Subject(s) - crystal (programming language) , materials science , layer (electronics) , microwave , center (category theory) , absorption (acoustics) , photoionization , spectral line , absorption spectroscopy , band gap , luminescence , laser , analytical chemistry (journal) , atomic physics , optics , chemistry , optoelectronics , ion , crystallography , ionization , nanotechnology , physics , organic chemistry , quantum mechanics , astronomy , computer science , composite material , programming language , chromatography

We have studied the absorption and luminescence spectra of color centers in a LiF crystal surface thin layer which are produced by low energy electrons from a secondary electron emission microwave discharge. The intensityratio of the absorption band due to the F 2 color center to the band due to the F center was observed to be much higher than the ratio of these color centers produced in the whole bulk crystal. It was found that the F − 2 center is produced in a thin layer through a selective two‐step photoionization of F 2 color center by irradiation with the 514.5 nm Ar + laser line. A mechanism of colorcenter formation in the thin layer is discussed.

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