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We have investigated the possible water adsorption forms on the stepped Si(110) surface. Calculations have been performed by using the empirical tight‐binding method. Two types of adsorption model of water on a single layer stepped Si(110) surface have been considered, one of them is the dissociative type (H, OH) and the other one is the molecular type (H 2 O). The total electronic energy and TDOS calculations lead to a dissociative type of water adsorption on the stepped Si(110) surface excluding the molecular type as it was found on the flat Si(110) surface.