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Optical absorption and photoconductivity at the band edge of β‐Ga 2−x In x O 3
Author(s) -
Vasyltsiv V. I.,
Rym Ya. I.,
Zakharko Ya. M.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221950232
Subject(s) - octahedron , absorption edge , gallium , indium , photoconductivity , absorption (acoustics) , tetrahedron , atomic physics , materials science , absorption band , atomic electron transition , range (aeronautics) , band gap , analytical chemistry (journal) , crystallography , chemistry , optics , physics , optoelectronics , spectral line , crystal structure , metallurgy , composite material , chromatography , astronomy
Single crystals of β‐Ga 2− x In x O 3 with x = 0 to 0.2 have been grown by the float zone technique using radiation heating. When x increases from 0 to 0.2, the interionic distance O‐Ga in the gallium octahedron and tetrahedron increase on the average by 1 to 1.5% and, as a consequence, the position of the steep absorption edge of band‐to‐band electron transitions shifts towards smaller energies by 0.3 eV. Simultaneously, a strong and broad absorption band in the energy range 3.5 to 4.5 eV appears, caused by charge transfer electron transitions from 2p oxygen to 5s indium energy levels in octahedral indium clusters.