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Hopping conductivity in p‐type β‐FeSi 2
Author(s) -
Lisunov K. G.,
Arushanov E. K.,
Kloc Ch.,
Malang U.,
Bucher E.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221950125
Subject(s) - condensed matter physics , electrical resistivity and conductivity , conductivity , dielectric , coulomb , radius , materials science , liquid helium , type (biology) , constant (computer programming) , helium , physics , atomic physics , electron , quantum mechanics , optoelectronics , ecology , computer security , computer science , biology , programming language
The results of resistivity measurements on p‐type β‐FeSi 2 single crystals down to the liquid helium temperature are presented and analyzed within the framework of different hopping conductivity models. The values of the characteristic and transition temperatures, the density of states, and the width of the Coulomb quasigap as well as the localization radius and the dielectric constant are determined.