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Grain boundary scattering in DC transport in thin metallic films
Author(s) -
Gerlach E.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221950118
Subject(s) - scattering , materials science , grain boundary , thin film , metal , electrical resistivity and conductivity , dielectric , condensed matter physics , grain size , composite material , optics , optoelectronics , metallurgy , nanotechnology , microstructure , electrical engineering , physics , engineering
The energy‐loss transport theory is applied to calculate the resistivity due to grain boundary scattering in a thin metallic film adjacent to two dielectric media, e.g. vacuum/Ag/Si. The common “bulk” result by Mayadas and Shatzkes for small film thicknesses is found to be reduced by about 20% due to image effects.