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Transient photocurrents under optical bias in time‐of‐flight experiment with amorphous films of As 2 Se 3 : Sn and As 2 S 3 : Sb 2 S 3
Author(s) -
Iovu M. S.,
Shutov S. D.,
Toth L.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221950117
Subject(s) - amorphous solid , chalcogenide , tin , photosensitivity , materials science , ternary operation , relaxation (psychology) , trapping , activation energy , analytical chemistry (journal) , optics , optoelectronics , chemistry , crystallography , physics , psychology , social psychology , ecology , chromatography , computer science , programming language , metallurgy , biology
Relaxation of pulsed photocurrents under optical bias is studied in amorphous films of ternary glassy alloys As 2 Se 3 :Sn x ( x = 0 to 3.5 at%) and (1− y )(As 2 S 3 ): y (Sb 2 S 3 ) ( y = 0 to 0.55) by the time‐of‐flight technique. In the frame of a multiple‐trapping model it is shown that by adding tin and Sb 2 S 3 to the glass formers As 2 Se 3 and As 2 Se 3 respectively, the hole drift mobility is strongly increased (up to 200 times), while small amounts of tin (about 1 at%) hamper the recombination. Optical bias causes the drift mobility to increase many times with its activation energy being decreased. The obtained results indicate the variation in occupation of deep localized centres and explain the known effect of photosensitivity enhancement when ternary chalcogenide glassy alloys are used in layer structures for optical information storage.