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The temperature dependence of the LO(T) and TO(T) phonons in GaAs and InP
Author(s) -
Irmer G.,
Wenzel M.,
Monecke J.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221950110
Subject(s) - phonon , anharmonicity , condensed matter physics , raman spectroscopy , lattice (music) , chemistry , physics , optics , acoustics
The LO and TO phonon frequencies and dampings have been measured by near‐infrared Raman spectroscopy both in bulk GaAs and InP. The phonon damping of the LO phonon in InP is much smaller than the LO phonon damping in GaAs. The experimentally obtained temperature dependences were compared with a theory including cubic anharmonic processes and the thermal expansion of the lattice. It is shown that the phonon damping is mainly affected by decay processes into acoustic phonons.