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Collisional broadening effect in vacuum emission of hot electrons from SiO 2 : The role of non‐polar optical phonon scattering
Author(s) -
Reggiani L.,
Fitting H.J.,
Hingst Th.,
Köhn J.,
Beauvivre S.,
Varani L.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221940222
Subject(s) - electron , scattering , polar , atomic physics , phonon , monte carlo method , materials science , hot electron , physics , condensed matter physics , optics , nuclear physics , statistics , mathematics , astronomy
The energy distribution function of hot electrons emitted from a 13 nm SiO 2 layer is measured through vacuum emission experiments up to 4 eV. The results evidence the presence of carriers in an energy region well above the ballistic threshold. A Monte Carlo simulation of carrier transport in the presence of non‐polar scattering and collisional broadening is in qualitative agreement with the experiments thus providing a value of 3.1 × 10 9 eV/cm for the deformation potential and a direct indication of collisional broadening effect in high‐field transport of electrons in SiO 2 .