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The hot electron distribution function under impurity breakdown conditions
Author(s) -
Kundrotas J.,
Dargys A.,
Cesna A.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221940220
Subject(s) - impurity , boltzmann equation , distribution function , ionization , impact ionization , electron , doping , semiconductor , lattice (music) , boltzmann constant , materials science , hot electron , atomic physics , condensed matter physics , physics , thermodynamics , ion , optoelectronics , quantum mechanics , acoustics
The Boltzmann transport equation is solved by sparse‐matrix method under conditions that are typical for experiments of neutral impurity breakdown at low lattice temperatures. A strong cooling effect due to impact‐ionizing collisions is found on the hot carrier distribution function in moderately doped semiconductors. Implications of the cooling effect on the impact ionization coefficient are discussed. The results of simulation are presented for parameter values that are typical for n‐type GaAs doped with shallow donors and compensating acceptors, and compared with experimental data.