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Electrical dislocation resistivity and anisotropic scattering in high‐purity copper single crystals
Author(s) -
Sachslehner F.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221940218
Subject(s) - condensed matter physics , electrical resistivity and conductivity , scattering , anisotropy , dislocation , materials science , annealing (glass) , copper , impurity , electron scattering , chemistry , optics , metallurgy , physics , organic chemistry , quantum mechanics
The experimental dislocation resistivity (or the deviation from Matthiessen's rule (DMR)) at 4.2 and 77 K of several single slip and multislip crystals was investigated. Additionally low‐field Hall effect measurements at 4.2K using a dc SQUID picovoltmeter were performed in order to study the anisotropy of electron–dislocation and electron‐impurity scattering directly. It is shown that oxygen annealing applied to increase the “electrical purity” of the crystals does not change the character of the scattering behaviour. The anisotropy parameters A dis for electron–dislocation scattering derived within the two‐group model are in good agreement with recent results for high‐purity polycrystals.