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Quantum confined stark effect and optical absorption in Al x Ga 1−x As/GaAs/Al x Ga 1−x As
Author(s) -
Panda S.,
Panda B. K.,
Fung S.,
Beling C. D.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221940212
Subject(s) - wave function , laser linewidth , effective mass (spring–mass system) , absorption (acoustics) , stark effect , atomic physics , electron , absorption spectroscopy , electric field , field (mathematics) , condensed matter physics , spectral line , chemistry , physics , optics , quantum mechanics , laser , mathematics , pure mathematics
The effects of the electric field on the electron subband energies and wavefunctions in a single quantum well Al x Ga 1− x As/GaAs/Al x Ga 1− x As have been calculated using an analytic method which takes into account the variation of the effective mass at the barriers. The results are compared with the previous calculations which took the effective mass of GaAs inside and outside the well. The calculated energies and wavefunctions together with the experimental linewidth broadening are used to obtain the inter‐subband optical absorption spectra and the change in the real part of the index of refraction in the well.