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Peculiarities of thermomagnetic effects in gapless semiconductors specified by spatial correlations of impurity charges
Author(s) -
Tsidilkovski I. M.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221940132
Subject(s) - thermomagnetic convection , condensed matter physics , scattering , semiconductor , impurity , coulomb , electron , ion , atmospheric temperature range , gapless playback , materials science , chemistry , physics , thermodynamics , magnetic field , nuclear physics , optoelectronics , organic chemistry , quantum mechanics , optics
The results of measurements of the thermomagnetic Nernst‐Ettingshausen effect (NEE) in the gapless semiconductor HgSe doped with iron are presented. The iron content in the samples varies from 1 × 10 18 to 4 × 10 20 cm −3 when the temperature varies from 9 to 100 K. A change of sign of the NEE from negative to positive when the iron content increases is observed at low temperatures. It is shown that the unusual dependence of the NEE on iron content in HgSe: Fe crystals at low temperatures, its sign change, and other peculiarities are caused by scattering of electrons on aggregates of charged donors Fe 3+ . Such an aggregate constitutes a weakly correlated system in the range of low iron concentrations and a strongly correlated Coulomb liquid in the range of high iron concentrations. A new mechanism of inelastic electron scattering on static defects, bivalent iron ions, is proposed, which allows to explain the anomalous decrease of the Lorenz factor with increasing temperature. All observed peculiarities of the thermomagnetic effects are interpreted quantitatively.